Upon graduation they go on to careers in academia or industry that involve exploring or developing new electronic device technologies. He is known for contributions to the theory, modeling, and understanding of semiconductor devices, especially nanoscale transistors, 1 2 and as the creator of the nanoHUB, a major online resource for nanotechnology. They become adept at addressing these problems through innovative theory and novel simulation approaches. Lundstrom is an American electrical engineering researcher, educator, and author. Company Type For Profit Lists Featuring This Company Energy Companies With Less Than 500M in Revenue (Top 10K) 9,794 Number of Organizations 211. Students in the Lundstrom Group are interested in device physics and design and in exploring new electronics device possibilities. Founders Mark Lundstrom, William Athol Operating Status Active Legal Name Radia, Inc. Current work is exploring new ideas for energy conversion, energy storage and conservation. LinkedIn is the world’s largest business network, helping professionals like Mark Lundstrom discover inside connections to recommended. The group has explored the ultimate and practical limits of CMOS transistors for digital logic and examined alternatives to the silicon MOSFET such as carbon nanotube, semiconductor nanowire, spintronic, and graphene transistors. View Mark Lundstrom’s professional profile on LinkedIn. (Assume a lattice spacing of a = 5.65 Angstroms = 0.565 nm.The Lundstrom Group explores the physics and technology of nanoelectronic devices. Answer the following questions about GaAs. View Mark Lundstroms business profile as Director, School of Electrical & Computer Engineering at Purdue University. The body diagonal of a cube of side, a, is 3a, so the NN spacing is d NN = 3a 4 = 3 0.564 nm () 4 = 0.244 nm d NN = 0.244 nm 2) Gallium arsenide (GaAs) has a zinc--blende crystal structure. Be careful about units! The nearest neighbor to an atom is ¼ of the body diagonal away. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests include physics, modeling, and simulation of carrier transport and electronic devices. He is currently a Distinguished Professor of Electrical and Computer Engineering with Purdue University. Novem15:22 ws-book9圆 Semiconductor fundamentals ws-book9圆 copy 2 page 310 310 Semiconductor fundamentals To summarize, as shown above in the gray box, we began with our gen- eral expression for. Atomic density: N u V u = 8 a 3 = 8 0.564 ! 10 "7 () 3 = 4.46 ! 10 22 atoms/cm 3 N u V u = 4.46 ! 10 22 atoms/cm 3 Note: Proper MKS units would be atoms/m 3, but for semiconductor work, it is common to use cm. degree in electrical engineering from Purdue University, West Lafayette, IN, USA. The radia-tive lifetime is one over the B coe ffi cient of the semiconductor times the doping density (or hole concentration). Solution: Volume of the cubic unit cell: V u = a 3 (a = 0.564 ! 10 "7 cm) Number of atoms in the cubic unit cell: N u = 8 ! 1 8 + 6 ! 1 2 + 4 = 8 (Eight on the corners, shared with 8 neighbors + 6 on the faces, each one shared with a nearest neighbor + 4 in the interior.) See Fig. Find the atomic density (atoms/cm 3) and the spacing between nearest--neighbor atoms in Ge. SOLUTIONS: ECE 305 Homework 1: Week 1 Mark Lundstrom Purdue University 1) Ge has the same crystal structure (diamond) as Si, with a lattice constant of a = 5.64 Angstroms = 0.564 nm.
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